irfr/u1205 hexfet ? power mosfet s d g v dss = 55v r ds(on) = 0.027 w i d = 44a ? description parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 44 ? i d @ t c = 100c continuous drain current, v gs @ 10v 31 ? a i dm pulsed drain current ?? 160 p d @t c = 25c power dissipation 107 w linear derating factor 0.71 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ?? 210 mj i ar avalanche current ?? 25 a e ar repetitive avalanche energy ?? 11 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings parameter typ. max. units r q jc junction-to-case CCC 1.4 r q ja junction-to-ambient (pcb mount) ** CCC 50 c/w r q ja junction-to-ambient CCC 110 thermal resistance d-p ak to-252aa i-pa k to-251aa l ultra low on-resistance l surface mount (irfr1205) l straight lead (IRFU1205) l fast switching l fully avalanche rated fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. the d-pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. the straight lead version (irfu series) is for through- hole mounting applications. power dissipation levels up to 1.5 watts are possible in typical surface mount applications. www.freescale.net.cn 1 / 10
parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.055 CCC v/c reference to 25c, i d = 1ma CCC CCC 0.027 v gs = 10v, i d = 26a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 17 CCC CCC s v ds = 25v, i d = 25a ? CCC CCC 25 a v ds = 55v, v gs = 0v CCC CCC 250 v ds = 44v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v q g total gate charge CCC CCC 65 i d = 25a q gs gate-to-source charge CCC CCC 12 nc v ds = 44v q gd gate-to-drain ("miller") charge CCC CCC 27 v gs = 10v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 7.3 CCC v dd = 28v t r rise time CCC 69 CCC ns i d = 25a t d(off) turn-off delay time CCC 47 CCC r g = 12 w t f fall time CCC 60 CCC r d = 1.1 w, see fig. 10 ?? between lead, 6mm (0.25in.) from package and center of die contact ? c iss input capacitance CCC 1300 CCC v gs = 0v c oss output capacitance CCC 410 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 150 CCC ? = 1.0mhz, see fig. 5 ? electrical characteristics @ t j = 25c (unless otherwise specified) nh i gss s d g l s internal source inductance CCC 7.5 CCC r ds(on) static drain-to-source on-resistance l d internal drain inductance CCC 4.5 CCC i dss drain-to-source leakage current s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ?? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 22a, v gs = 0v ? t rr reverse recovery time CCC 65 98 ns t j = 25c, i f =25a q rr reverse recoverycharge CCC 160 240 nc di/dt = 100a/s ?? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics a 44 ? 160 notes: ? v dd = 25v, starting t j = 25c, l = 470h r g = 25 w , i as = 25a. (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd 25a, di/dt 320a/s, v dd v (br)dss , t j 175c ? this is applied for i-pak, ls of d-pak is measured between lead and center of die contact ? uses irfz44n data and test conditions ? calculated continuous current based on maximum allowable junction temperature; package limitation current = 20a ? pulse width 300s; duty cycle 2%. irfr/u1205 www.freescale.net.cn 2 / 10
fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics fig 2. typical output characteristics tion 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source volta g e ( v ) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20 s pulse width t = 25c c a 4.5v 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source volta g e ( v ) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v a 4.5v 20 s pulse w idth t = 175c c 1 10 100 1000 45 678 910 t = 25c j gs v , g ate-to-s ource v oltag e (v ) d i , drain-to-source current (a) a v = 2 5v 20s pulse w idth ds t = 175c j 0.0 0.5 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature ( c ) r , drain-to-s ource o n r esistance ds(on) (n orm alized) v = 10v gs a i = 4 1a d irfr/u1205 www.freescale.net.cn 3 / 10
fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 500 1000 1500 2000 2500 1 10 100 c, capacitance (pf) ds v , drain-to-source volta g e ( v ) a v = 0v , f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 10203040506070 q , total g ate char g e ( nc ) g v , g ate-to-source voltage (v) gs a for test circuit s ee figure 13 v = 44v v = 28v ds ds i = 25 a d 1 10 100 1000 0.5 1.0 1.5 2.0 2.5 3.0 t = 25c j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a t = 175c j 1 10 100 1000 1 10 100 v , drain-to-source volta g e ( v ) ds i , drain current (a) ope ration in this area limite d by r d ds(on) 10s 100s 1ms 10ms a t = 25c t = 175c sin g le p u ls e c j irfr/u1205 www.freescale.net.cn 4 / 10
fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 5.0v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d limited by package irfr/u1205 www.freescale.net.cn 5 / 10
q g q gs q gd v g charge 5.0 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 10v 0 100 200 300 400 500 25 50 75 100 125 150 175 j e , single pulse avalanche energy (m j) as i top 10a 18a bo tto m 25a a startin g t , junction temperature ( c ) v = 25v d dd irfr/u1205 www.freescale.net.cn 6 / 10
p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * irfr/u1205 www.freescale.net.cn 7 / 10
package outline to-252aa outline dimensions are shown in millimeters (inches) to-252aa (d-park) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.2 5 (.0 10 ) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) m in . 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - source 4 - d r a in 10.42 (.410) 9.40 (.370) notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s t o je d e c o u t lin e to -25 2a a . 4 dimensions show n are before solder dip, s o l d e r d ip m a x. +0 .16 (.00 6). international re ctifie r assembly lot code exa m ple : this is an ir fr120 w ith as sem bly lot cod e 9u1p first portion of part number second portion of part number 120 ir fr 9u 1p a irfr/u1205 www.freescale.net.cn 8 / 10
package outline to-251aa outline dimensions are shown in millimeters (inches) to-251aa (i-park) part marking information 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0 .25 (.01 0) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - source 4 - d r a in notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s to j e d e c o u t lin e t o -25 2a a . 4 dimensions show n are before solder dip, s o l d e r d ip m a x. +0.1 6 (.00 6). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018) inte rnational rectifier as sem bly lot code first portion of part numbe r second portion of part number 120 9u 1p exam ple : this is an irfu120 w ith assem bly lot code 9u1p irfu irfr/u1205 www.freescale.net.cn 9 / 10
tape & reel information to-252aa tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. o u tline co nfo rm s to e ia -481. 16 mm 13 inc h irfr/u1205 www.freescale.net.cn 10 / 10
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